| 000 | 00582nam a2200205Ia 4500 | ||
|---|---|---|---|
| 001 | 30394 | ||
| 008 | 140416s9999 xx 000 0 und d | ||
| 020 | _a0-85296-778-0 | ||
| 040 | _cPK-LaUMT | ||
| 082 |
_a 620.193 _bSTR- |
||
| 100 | _aC. K. Maiti | ||
| 245 |
_aStrained silicon heterostructures _bmaterials and devices _cC. K. Maiti<>N. B. Chakrabarti<>S. K. Ray |
||
| 260 |
_aLondon,UK: _bThe Institute of Electrical Enginners, _c2001 |
||
| 300 | _a496 p. | ||
| 546 | _aEN | ||
| 650 | _aHeterostructure | ||
| 700 | _aN. B. Chakrabarti | ||
| 700 | _aS. K. Ray | ||
| 942 | _cBK | ||
| 999 |
_c30519 _d30519 |
||